STGW39NC60VD STMICROELECTRONICS STMicroelectronics STGW39NC60VD N-channel IGBT Transistor, 80 A 600 V, 1MHz, 3-Pin TO-247
Description
STMicroelectronics STGW39NC60VD N-channel IGBT Transistor, 80 A 600 V, 1MHz, 3-Pin TO-247
Producer
STMICROELECTRONICS
The product with part number STGW39NC60VD (STMicroelectronics STGW39NC60VD N-channel IGBT Transistor, 80 A 600 V, 1MHz, 3-Pin TO-247)
is from company STMICROELECTRONICS and distributed with basic unit price 4,35 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions15.75 x 5.15 x 20.15mm Height20.15mm Length15.75mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current80 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation250 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Width5.15mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes & Modules, STMicroelectronics The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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