STGP30V60F STMICROELECTRONICS STMicroelectronics STGP30V60F N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220
Description
STMicroelectronics STGP30V60F N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220
Producer
STMICROELECTRONICS
The product with part number STGP30V60F (STMicroelectronics STGP30V60F N-channel IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-220)
is from company STMICROELECTRONICS and distributed with basic unit price 2,54 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions10.4 x 4.6 x 15.75mm Height15.75mm Length10.4mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current30 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation260 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-220 Pin Count3 Switching Speed1MHz Width4.6mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes & Modules, STMicroelectronics The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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