STGWT30V60DF STMICROELECTRONICS STMicroelectronics STGWT30V60DF N-channel IGBT Transistor, 60 A 600 V, 1MHz, 3-Pin TO-3P
Description
STMicroelectronics STGWT30V60DF N-channel IGBT Transistor, 60 A 600 V, 1MHz, 3-Pin TO-3P
Producer
STMICROELECTRONICS
The product with part number STGWT30V60DF (STMicroelectronics STGWT30V60DF N-channel IGBT Transistor, 60 A 600 V, 1MHz, 3-Pin TO-3P)
is from company STMICROELECTRONICS and distributed with basic unit price 3,19 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions15.7 x 5.7 x 26.7mm Height26.7mm Length15.7mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current60 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation258 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-3P Pin Count3 Switching Speed1MHz Width5.7mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes & Modules, STMicroelectronics The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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