STGF10NC60HD STMICROELECTRONICS STMicroelectronics STGF10NC60HD N-channel IGBT Transistor, 9 A 600 V, 1MHz, 3-Pin TO-220FP
Description
STMicroelectronics STGF10NC60HD N-channel IGBT Transistor, 9 A 600 V, 1MHz, 3-Pin TO-220FP
Producer
STMICROELECTRONICS
The product with part number STGF10NC60HD (STMicroelectronics STGF10NC60HD N-channel IGBT Transistor, 9 A 600 V, 1MHz, 3-Pin TO-220FP)
is from company STMICROELECTRONICS and distributed with basic unit price 0,93 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions10.4 x 4.6 x 16.4mm Height16.4mm Length10.4mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current9 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation24 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-220FP Pin Count3 Switching Speed1MHz Width4.6mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Following Parts
Random Products
(keyword STGF10NC60HD STMICROELECTRONICS STMicroelectronics STGF10NC60HD N-channel IGBT Transistor, 9 A 600 V, 1MHz, 3-Pin TO-220FP)
