STGD18N40LZT4 STMICROELECTRONICS STMicroelectronics STGD18N40LZT4 N-channel IGBT Transistor, 30 A 420 V, 1MHz, 3-Pin DPAK

Part Nnumber
STGD18N40LZT4
Description
STMicroelectronics STGD18N40LZT4 N-channel IGBT Transistor, 30 A 420 V, 1MHz, 3-Pin DPAK
Producer
STMICROELECTRONICS
Basic price
1,71 EUR

The product with part number STGD18N40LZT4 (STMicroelectronics STGD18N40LZT4 N-channel IGBT Transistor, 30 A 420 V, 1MHz, 3-Pin DPAK) is from company STMICROELECTRONICS and distributed with basic unit price 1,71 EUR. Minimal order quantity is 1 pc.


Channel TypeN ConfigurationSingle Dimensions6.6 x 6.2 x 2.4mm Height2.4mm Length6.6mm Maximum Collector Emitter Voltage420 V Maximum Continuous Collector Current30 A Maximum Gate Emitter Voltage16V Maximum Operating Temperature+175 °C Maximum Power Dissipation125 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeDPAK Pin Count3 Width6.2mm Product Details IGBT Discretes, STMicroelectronics IGBT Discretes & Modules, STMicroelectronics The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


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