STD2LN60K3 STMICROELECTRONICS MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET

Part Nnumber
STD2LN60K3
Description
MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET
Producer
STMICROELECTRONICS
Basic price
0,84 EUR

The product with part number STD2LN60K3 (MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET) is from company STMICROELECTRONICS and distributed with basic unit price 0,84 EUR. Minimal order quantity is 1 pc, Approx. production time is 10 weeks.


STMicroelectronics Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 2 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 4.5 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 12 nC Pd - Power Dissipation: 45 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Brand: STMicroelectronics Channel Mode: Enhancement Fall Time: 21 ns Rise Time: 8.5 ns Series: STD2LN60K3 Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 23.5 ns


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